vishay siliconix si4336dy document number: 72417 s-70316-rev. d, 12-feb-07 www.vishay.com 1 n-channel 30-v (d-s) mosfet features ? ultra low on-resistance using high density trenchfet ? gen ii power mosfet technology ?q g optimized ? 100 % r g tested applications ? synchronous buck low-side - notebook - server - workstation ? synchronous rectifier, pol product summary v ds (v) r ds(on) ( )i d (a) q g (typ) 30 0.00325 at v gs = 10 v 25 36 0.0042 at v gs = 4.5 v 22 s s d d d s g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4336DY-T1-E3 (lead (pb)-free) si4336dy-t1 d g s n-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 sec steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a t a = 25 c i d 25 17 a t a = 70 c 20 13 pulsed drain current (10 s pulse width) i dm 70 continuous source current (diode conduction) a i s 2.9 1.3 avalanche current l = 0.1 mh i as 50 maximum power dissipation a t a = 25 c p d 3.5 1.6 w t a = 70 c 2.2 1 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 sec r thja 29 35 c/w steady state 67 80 maximum junction-to-foot (drain) steady state r thjf 13 16 available rohs* compliant
www.vishay.com 2 document number: 72417 s-70316-rev. d, 12-feb-07 vishay siliconix si4336dy notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 5 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 25 a 0.0026 0.00325 v gs = 4.5 v, i d = 22 a 0.0033 0.0042 forward transconductance a g fs v ds = 15 v, i d = 25 a 110 s diode forward voltage a v sd i s = 2.9 a, v gs = 0 v 0.72 1.1 v dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 5600 pf output capacitance c oss 860 reverse transfer capacitance c rss 415 total gate charge q g v ds = 15 v, v gs = 4.5 v, i d = 20 a 36 50 nc gate-source charge q gs 18 gate-drain charge q gd 10 gate resistance r g 0.8 1.3 2.0 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 24 35 ns rise time t r 16 25 turn-off delay time t d(off) 90 140 fall time t f 32 50 source-drain reverse recovery time t rr i f = 2.9 a, di/dt = 100 a/s 45 70 output characteristics 0 10 20 30 40 50 60 0.0 0.4 0.8 1.2 1.6 2. 0 v gs = 10 thru 4 v 3 v v ds - drain-to-source voltage (v) - drain current (a) i d transfer characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 c t c = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 72417 s-70316-rev. d, 12-feb-07 www.vishay.com 3 vishay siliconix si4336dy typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.000 0.001 0.002 0.003 0.004 0.005 0 1020304050 v gs = 10 v - on-resistance ( r ds(on) ) i d - drain current (a) v gs = 4.5 v 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40 45 v ds = 15 v i d = 20 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 1.0 1.2 0.1 10 50 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 1 capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 1000 2000 3000 4000 5000 6000 7000 0 6 12 18 24 3 0 c rss v ds - drain-to-source voltage (v) c - capacitance (pf) c oss c iss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 25 a t j - junction temperature (c) r ds(on) - on-resistance (normalized) 0.000 0.003 0.006 0.009 0.012 0.015 0246810 i d = 25 a - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v)
www.vishay.com 4 document number: 72417 s-70316-rev. d, 12-feb-07 vishay siliconix si4336dy typical characteristics 25 c, unless otherwise noted threshold voltage - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) single pulse power 0 30 60 10 20 power (w) time (sec) 40 50 1 100 600 10 10 - 1 10 - 2 safe operating area, junction-to-case 100 1 0.0 1 10 100 0.01 10 1 s 0.1 t c = 25 c single pulse 10 ms 100 ms dc 0.1 *limited by r ds(on) 10 s v ds - drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified > normalized thermal transient im pedance, junction-to-ambient 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 67 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 72417 s-70316-rev. d, 12-feb-07 www.vishay.com 5 vishay siliconix si4336dy typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?72417 . normalized thermal transient impedance, junction-to-foot 10 - 3 10 - 2 110 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 s q uare wave pulse duration ( sec ) normalized effective transient thermal impedance
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